Method for analyzing defect of SRAM cell

ABSTRACT

Disclosed is a method for analyzing a defect of a semiconductor device, and more particularly a method for electrically analyzing a defect of a transistor formed in a cell having a latch structure, such as SRAM or a sense amplifier of DRAM. The defect analyzing method according to the present invention comprises the steps of forming a test SRAM cell array in a scribe lane region of a wafer which is formed with a plurality of SRAM chips, forming a pad portion for testing the SRAM cell array on the scribe lane region, and applying a predetermined test voltage to the SRAM cell array through the pad portion. The respective array cells constituting the SRAM cell array are provide with two word lines, and individual test voltages can be applied through the pad portion to the two word lines, respectively.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for analyzing a defect of asemiconductor device, and more particularly to a method for electricallyanalyzing a defect for a pattern having a latch structure, such as SRAMor a sense amplifier of DRAM.

2. Description of the Prior Art

As generally known in the art, defect analysis for SRAM employs aphysical measuring method such as SEM, TEM or the like, or a method inwhich a test pattern (it may not wholly correspond to a normal pattern)is prepared under the same design rule as that of a normal pattern andthe test pattern is analyzed with respect to whether or not a shortcircuit or a bridge is generated.

However, since a normal pattern and a test pattern (e.g., an SRAM celland a correspondent test cell) partially differ from each other, it isproblematic to exactly find out whether or not the normal pattern thenormal pattern is defective simply by defect analysis for the testpattern.

SUMMARY OF THE INVENTION

Accordingly, the present invention has been made to solve theabove-mentioned problem occurring in the prior art, and an object of thepresent invention is to provide a defect analyzing method which canelectrically find out a defect of a normal memory cell pattern and testwhether or not a short circuit and a bridge is generated in a memorycell array by embodying the same test memory cell pattern as the normalmemory cell pattern.

In order to accomplish this object, there is provided a method foranalyzing a defect of a semiconductor device, the method comprising thesteps of: forming a test SRAM cell array in a scribe lane region of awafer which is formed with a plurality of SRAM chips; forming a padportion for testing the SRAM cell array on the scribe lane region; andapplying a predetermined test voltage to the SRAM cell array through thepad portion, wherein two switch transistors of the respective arraycells constituting the SRAM cell array are connected to two word linesdifferent from each other, and individual test voltages can be appliedthrough the pad portion to the two word lines, respectively.

Also, the method for analyzing a defect of a semiconductor device inaccordance with the present invention may perform an electrical test byforming a test pattern for the test in a scribe lane region, the testpattern being the same as a cell which has a latch structure formed in acell region, and by applying a test voltage to the test pattern througha pad.

Here, since the test pattern is formed identically to an SRAM cell ofthe cell region including a first word line and a second word line, afirst bit line and a second bit line, and a first transistor and asecond transistor, whether or not the SRAM cell is defective can bechecked by changing voltage levels applied to the first and second wordlines and the first and second bit lines, and applied as a power sourcevoltage and a ground voltage.

Also, since the test pattern is formed identically to a sense amplifierof the cell region, whether or not the sense amplifier is defective canbe checked by changing a voltage level applied to the test pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will be more apparent from the following detailed descriptiontaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a circuit diagram of an SRAM cell for explaining a defectanalyzing method of a semiconductor device in accordance with thepresent invention;

FIG. 2 is a graph showing an electrical current in a case where there isno defect as a result of a test according to examples 3 and 4;

FIG. 3 is a graph showing an electrical current in a case where there isa defect as a result of a test according to examples 3 and 4;

FIG. 4 is a graph showing an electrical current in a case where there isno defect as a result of a test according to examples 5 and 6;

FIG. 5 is a graph showing an electrical current in a case where there isa defect as a result of a test according to examples 5 and 6; and

FIG. 6 is a graph showing a result of an operation for examining whatcauses a leakage current in FIG. 3 or FIG. 5.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, a preferred embodiment of the present invention will bedescribed with reference to the accompanying drawings. In the followingdescription and drawings, the same reference numerals are used todesignate the same or similar components, and so repetition of thedescription on the same or similar components will be omitted.

A method for analyzing a defect of a semiconductor device in accordancewith the present invention will be described herein with respect to acase in which the method is embodied for SRAM. However, the presentinvention is not limited to this case, but may be applied to a cellhaving a latch structure, such as a sense amplifier of DRAM.

FIG. 1 is a basic circuit diagram of an SRAM cell, which is intended toexplain a method for analyzing a defect of SRAM in accordance with apreferred embodiment of the present invention.

A test SRAM cell includes a first word line and a second word line WL2,WL1, a first bit line and a second bit line /BIT, BIT, a firsttransistor and a second transistor for performing a switching functionT1, T2, and a first inverter T3, T5 and a second inverter T4, T6connected in parallel to each other between a power source voltage and aground voltage.

Here, a gate of the first transistor is connected to the first wordline, a gate of the second transistor is connected to the second wordline, one terminal of the first transistor is connected to the first bitline, the other terminal of the first transistor is connected in commonto an output terminal of the first inverter and an input terminal of thesecond inverter, one terminal of the second transistor is connected tothe second bit line, and the other terminal of the second transistor isconnected in common to an output terminal of the second inverter and aninput terminal of the first inverter.

According to the present invention, whether or not the SRAM cell isdefective is checked by changing voltage levels applied to the first andsecond word lines and the first and second bit lines, and applied as thepower source voltage and the ground voltage.

For reference, the cell having the above-mentioned structure differsfrom a general cell structure in that the gate of the first transistorT1 is connected to the first word line WL2 and the gate of the secondtransistor T2 is connected to the second word line WL1 for the purposeof testing a defect of the cell. Herein, “BIT” and “/BIT” designate bitlines and “WL1” and “WL2” designate word lines. In addition, “VCC” and“VSS” designate a power source voltage for driving a latch-type memorycell and a ground voltage, respectively. A more detailed descriptionwill be given below.

A circuit shown in FIG. 1 is a test circuit formed on a scribe lane of awafer and such a cell array was built up to 8K in the present test. Incontrast with a general memory cell, two word lines WL1, WL2 wereprovided for one cell to enable switch components to be individuallyturned on/off, which corresponds to line arrangement for a defectanalyzing test.

Defect analysis for the cell in FIG. 1 was conducted under conditionslisted below in Table 1.

For reference, separate pads for applying voltages to the bit lines andthe word lines, and applying the power source voltage and the groundvoltage were provided in FIG. 1 and Table 1. TABLE 1 Fixing wordApplying high Applying Applying Applying Applying 0 V lines at level tonode 5.7 V as 5.7 V to 5.7 V to to ground specific N1 and power each ofbit line/ voltage, voltage applying low source bit line BIT well levellevel to node voltage BIT and voltage and (sampling N2: Example 1 VCCword line word line mode) WL1 WL2 Applying low Applying ApplyingApplying Applying 0 V level to node 5.7 V as 5.7 V to 5.7 V to to groundN1 and power each of bit line voltage, applying high source bit line BITwell level to node voltage BIT and voltage and N2: Example 2 VCC wordline word line WL2 WL1 Slowly Applying low Boosting Placing ApplyingApplying 0 V raising level to node word lines power 5.7 V to to groundvoltage of N1 and WL1, WL2 source bit line voltage, word line applyinghigh from 0 V voltage BIT well or bit line level to node to 5.7 V as 5.7V voltage and (sweep N2: Example 3 bit line/ mode) BIT Applying highBoosting Placing Applying Applying 0 V level to node word lines power5.7 V to to ground N1 and WL1, WL2 source bit line/ voltage, applyinglow from 0 V voltage BIT well level to node to 5.7 V as 5.7 V voltageand N2: Example 4 bit line BIT Sweeping bit Boosting Placing ApplyingApplying 0 V line BIT: bit line power 5.7 V to to ground Example 5 BITfrom 0 V source bit line/ voltage, to 5.7 V voltage BIT well as 5.7 Vvoltage and word lines WL1, WL2 Sweeping bit Boosting Placing ApplyingApplying 0 V line/BIT: bit line/ power 5.7 V to to ground Example 6 BITfrom source bit line voltage, 0 V to 5.7 V voltage BIT well as 5.7 Vvoltage and word lines WL1, WL2

Referring to Table 1, Example 1 represents a method for checking adefect of the cell by applying a high voltage at a specific level to thefirst word line, the first bit line and the second bit line, andconnecting the second word line and a bias voltage of a well, in whichthe cell is located, to the ground voltage.

Example 2 represents a method for checking a defect of the cell byapplying a high voltage at a specific level to the second word line, thefirst bit line and the second bit line, and connecting the first wordline and a bias voltage of a well, in which the cell is located, to theground voltage.

Example 3 represents a method for checking a defect of the cell byapplying a high voltage at a specific level to the second bit line afterthe first and second word lines have been boosted from the groundvoltage level to a specific high voltage level, and connecting the firstbit line and a bias voltage of a well, in which the cell is located, tothe ground voltage.

Example 4 represents a method for checking a defect of the cell byapplying a high voltage at a specific level to the first bit line afterthe first and second word lines have been boosted from the groundvoltage level to a specific high voltage level, and connecting thesecond bit line and a bias voltage of a well, in which the cell islocated, to the ground voltage.

Example 5 represents a method for checking a defect of the cell byapplying a high voltage at a specific level to the first bit line afterthe second bit line has been boosted from the ground voltage level to aspecific high voltage level, and connecting the first and second wordlines and a bias voltage of a well, in which the cell is located, to theground voltage.

Example 6 represents a method for checking a defect of the cell byapplying a high voltage at a specific level to the second bit line afterthe first bit line has been boosted from the ground voltage level to aspecific high voltage level, and connecting the first and second wordlines and a bias voltage of a well, in which the cell is located, to theground voltage.

As a result of measurements according to the measuring methodsrepresented in Table 1, for example, as a result of measurementsaccording to Examples 1 and 2, it may be estimated that there is a shortcircuit between a node N1 and the bit line /BIT or a short circuitbetween the node N1 and the ground voltage in FIG. 1 when a leakagecurrent to the bit line has been measured. It is also possible toestimate that there is a short circuit between a node N2 and the bitline /BIT or a short circuit between the node N2 and the ground voltage.

In this case, if the leakage current has a difference before and afterturning-on of the word line in a retest under the conditions as those ofExamples 3 and 4, it can be seen that there is a short circuit betweenthe node N1 or N2 and the ground voltage (See FIG. 3).

In a case where a leakage current occurs as a result of tests accordingto Examples 1 and 2, it may be estimated that there is a short circuitbetween the node and the bit line if tests according to Examples 3 and 4exhibits no leakage current and tests according to Examples 5 and 6exhibits the occurrence of a leakage current.

FIG. 2 is a graph showing an electrical current in a case where there isno defect as a result of a test according to examples 3 and 4, and FIG.3 is a graph showing an electrical current in a case where there is adefect as a result of a test according to examples 3 and 4. In a casewhere there is a defect, the leakage flows more than in FIG. 2 as seenfrom FIG. 3.

FIG. 4 is a graph showing an electrical current in a case where there isno defect as a result of a test according to examples 5 and 6, and FIG.5 is a graph showing an electrical current in a case where there is adefect as a result of a test according to examples 5 and 6. In a casewhere there is a defect, the leakage flows more than in FIG. 4 as seenfrom FIG. 5.

FIG. 6 is a graph showing a result of an operation for examining whatcauses a leakage current in FIG. 3 or FIG. 5.

In FIG. 6, change in an electrical current flowing in a transistor whichhas a defect as in FIGS. 3 and 5 was measured while a voltage of a wellformed with the memory cell varies. In the present test, the biasvoltages of a well was applied as 0 V, −1 V, −2 V and −3 V,respectively, and the amount of change in an electrical current flowingin the relevant transistor which is estimated to have a defect wasmeasured.

As seen from the test result, the leakage current is decreased as thebias voltage of a well varies toward a lower negative voltage. It can beinferred from this test result that a defect in a cell transistor iscaused by a dislocation which may be generated during the formation of amemory cell. Since the test shows that the leakage current changes whenthe bias voltage of a well in which the cell located varies, theabove-mentioned inferential result (that is, the result saying that adefect is caused by a dislocation) is regarded as appropriate.

The present invention has been described above on the subject of SRAM,but it should not be limited to this. Besides SRAM, electrical defectanalysis may be performed by preparing a pattern having a latchstructure, such as a sense amplifier of DRAM, and changing a voltagelevel applied to a test pattern, so that manufacturers understanding thetechnical sprits of the present invention can diversely embody thepresent invention.

As seen from the above description, a defect analyzing method inaccordance with the present invention is very effective in readilyanalyzing a defect of a transistor constituting each memory cell, acause of the defect and a solution to the defect.

In other words, when the defect analyzing method of an SRAM cell inaccordance with the present invention is employed, a dislocation of amemory cell transistor can be detected and a leakage current due to thedislocation can be controlled by adjusting a bias voltage of a well.

Although a preferred embodiment of the present invention has beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventionas disclosed in the accompanying claims.

1. A method for analyzing a defect of an SRAM cell, the methodcomprising the steps of: forming a test SRAM cell array in a scribe laneregion of a wafer which is formed with a plurality of SRAM chips;forming a pad portion for testing the SRAM cell array on the scribe laneregion; and applying a predetermined test voltage to the SRAM cell arraythrough the pad portion, wherein two switch transistors of therespective array cells constituting the SRAM cell array are connected totwo word lines different from each other, and individual test voltagescan be applied through the pad portion to the two word lines,respectively.
 2. The method as claimed in claim 1, wherein the testpattern comprises: a first word line and a second word line; a first bitline and a second bit line; a first transistor and a second transistorfor performing a switching function; and a first inverter and a secondinverter connected in parallel to each other between a power sourcevoltage and a ground voltage, wherein a gate of the first transistor isconnected to the first word line, a gate of the second transistor isconnected to the second word line, one terminal of the first transistoris connected to the first bit line, the other terminal of the firsttransistor is connected in common to an output terminal of the firstinverter and an input terminal of the second inverter, one terminal ofthe second transistor is connected to the second bit line, and the otherterminal of the second transistor is connected in common to an outputterminal of the second inverter and an input terminal of the firstinverter, and wherein whether or not the SRAM cell is defective ischecked by changing voltage levels applied to the first and second wordlines and the first and second bit lines, and applied as the powersource voltage and the ground voltage.
 3. The method as claimed in claim2, wherein whether or not the cell is defective is checked by applying ahigh voltage at a specific level to the first word line, the first bitline and the second bit line, and connecting the second word line and abias voltage of a well, in which the cell is located, to the groundvoltage.
 4. The method as claimed in claim 2, wherein whether or not thecell is defective is checked by applying a high voltage at a specificlevel to the second word line, the first bit line and the second bitline, and connecting the first word line and a bias voltage of a well,in which the cell is located, to the ground voltage.
 5. The method asclaimed in claim 2, wherein whether or not the cell is defective ischecked by applying a high voltage at a specific level to the second bitline after the first and second word lines have been boosted from theground voltage level to a specific high voltage level, and connectingthe first bit line and a bias voltage of a well, in which the cell islocated, to the ground voltage.
 6. The method as claimed in claim 2,wherein whether or not the cell is defective is checked by applying ahigh voltage at a specific level to the first bit line after the firstand second word lines have been boosted from the ground voltage level toa specific high voltage level, and connecting the second bit line and abias voltage of a well, in which the cell is located, to the groundvoltage.
 7. The method as claimed in claim 2, wherein whether or not thecell is defective is checked by applying a high voltage at a specificlevel to the first bit line after the second bit line has been boostedfrom the ground voltage level to a specific high voltage level, andconnecting the first and second word lines and a bias voltage of a well,in which the cell is located, to the ground voltage.
 8. The method asclaimed in claim 2, wherein whether or not the cell is defective ischecked by applying a high voltage at a specific level to the second bitline after the first bit line has been boosted from the ground voltagelevel to a specific high voltage level, and connecting the first andsecond word lines and a bias voltage of a well, in which the cell islocated, to the ground voltage.
 9. A method for analyzing a defect of anSRAM cell, the method comprising the steps of: forming a test patternfor the test in a scribe lane region, the test pattern being the same asa cell which has a latch structure formed in a cell region; and applyinga test voltage to the test pattern through a pad, thereby performing anelectrical test.
 10. The method as claimed in claim 9, wherein whetheror not the cell is defective is checked by forming the test patternidentically to an SRAM cell of the cell region including a first wordline and a second word line, a first bit line and a second bit line, anda first transistor and a second transistor, and by changing voltagelevels applied to the first and second word lines and the first andsecond bit lines, and applied as a power source voltage and a groundvoltage.
 11. The method as claimed in claim 9, wherein whether or notthe cell is defective is checked by forming the test pattern identicallyto a sense amplifier of the cell region, and by changing a voltage levelapplied to the test pattern.